| 摘要 |
By positively employing a quantum structure such as a point contact, a quantum fine line, and a quantum dot on a semiconductor material so that an electric potential barrier is generated from a quantum effect of a conductive region, that is, from the constraint energy of one or zero dimension of electrons or holes and the electric potential barrier is controlled, flow and intensity of an electric current are controlled when light or electromagnetic wave is irradiated. A conductive region is formed by a quantum structure in which a difference in the constraint energies of the holes or electrons is formed between two electrodes, and when the light or electromagnetic wave is irradiated to a partial depletion region of the holes or electrons generated in the quantum structure, pairs of the electrons and the holes are generated in the partial depletion region. Thus, the depletion is released and an electric current flows therein.
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