ELECTRICAL FUSES EMPLOYING REVERSE BIASING TO ENHANCE PROGRAMMING

摘要

A fuse for semiconductor devices, in accordance with the present invention, includes a cathode (104) including a first dopant type, and an anode (102) including a second dopant type where the second dopant type is opposite the first dopant type. A fuse link (106) connects the cathode and the anode and includes the second dopant type. The fuse link and the cathode form a junction (111) therebetween, and the junction is configured to be reverse biased relative to a cathode potential and an anode potential. A conductive layer (103) is formed across the junction such that current flowing at the junction is diverted into the conductive layer to enhance material migration to program the fuse.