发明名称 |
High-brightness blue-light emitting crystalline structure |
摘要 |
A high-brightness blue-light emitting crystalline structure is provided for enhancing illuminating intensity of a blue-light emitting diode by taking advantage of a sapphire substrate, which is provided with a multi-layer distributed Bragg reflector (DBR) or a plated mirror layer on its surface for reflecting a part of the light created from a P-GaN surface so as to supplement the other part of light, which penetrates a transparent conductive layer directly. And, indium tin oxide is adopted for serving as a transparent conductive layer of blue-light emitting diode, or an extraordinarily thin nickel/aurum layer is plated on the P-GaN surface precedently before forming the ITO conductive layer to thereby care both the light-permeability and the ohmic contact resistance. A plurality of anti-reflection coatings (ARC) is formed on the ITO conductive layer for the enhancement of blue-light emissivity.
|
申请公布号 |
US2002117672(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010792446 |
申请日期 |
2001.02.23 |
申请人 |
CHU MING-SUNG;CHEN SHI-KUN;SUNG CHUN-YUNG;CHANG LIANG-TUNG |
发明人 |
CHU MING-SUNG;CHEN SHI-KUN;SUNG CHUN-YUNG;CHANG LIANG-TUNG |
分类号 |
H01L33/22;H01L33/32;H01L33/40;H01L33/46;(IPC1-7):H01L27/15;H01L31/12;H01L33/00 |
主分类号 |
H01L33/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|