NON-ARSENIC N-TYPE DOPANT IMPLANTATION FOR IMPROVED SOURCE/DRAIN INTERFACES WITH NICKEL SILICIDES

摘要

Disadvantageous roughness of interfaces (143) between electrically conductive NiSi layers (142) and n-doped Si regions (200, 202) arising during conventional salicide processing for forming shallow-depth source and drain junctions (204, 206) of NMOS transistors and/or CMOS devices is avoided, or at least substantially reduced, by substituting implanted non-As-containing n-type dopant ions, such as P and/or Sb ions, for the conventionally utilized implanted As n-type dopant ions. If desired, shallow-depth source and drain extensions (130, 132) may be formed by implantation of As-containing n-type dopant ions above the regions (200, 202) comprising the non-As-containing dopant ions without causing roughness of the NiSi/n-doped Si interfaces (143).