发明名称 PLASMA PROCESSING SYSTEM
摘要 Among members constituting a plasma etching system, plasma resistant members, e.g. an exhaust ring (12), an insulation ring (13), and first and second bellows covers (14, 15), are formed of yttrium fluoride (YF3) in order to enhance durability.
申请公布号 WO02067311(A1) 申请公布日期 2002.08.29
申请号 WO2002JP01526 申请日期 2002.02.21
申请人 TOKYO ELECTRON LIMITED;NAGAYAMA, NOBUYUKI;MITSUHASHI, KOUJI;NAKAYAMA, HIROYUKI 发明人 NAGAYAMA, NOBUYUKI;MITSUHASHI, KOUJI;NAKAYAMA, HIROYUKI
分类号 C23C4/04;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C4/04
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