发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to decrease a bit line equalizing time by distributing a plurality of pull-up transistors driving a bit line equalizing signal line in a conjunction region. CONSTITUTION: A semiconductor memory device includes a sub word decoder region(120), a bit line equalizing and sensing amplification region(140), and a conjunction region(160). A main word decoder circuit selects a cell array(100). A bit line equalizing signal generation circuit generates a bit line equalizing signal for controlling a transistor for precharge and equalizing offered to the bit line equalizing and sensing amplification region(140). A plurality of pull-up drivers drives a signal line for transporting the bit line equalizing signal with an established voltage.
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申请公布号 |
KR20020068772(A) |
申请公布日期 |
2002.08.28 |
申请号 |
KR20010009034 |
申请日期 |
2001.02.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JONG HYEON;JUNG, JUNG GEUN;KANG, SANG SEOK |
分类号 |
G11C11/4091;(IPC1-7):G11C11/409 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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