发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to decrease a bit line equalizing time by distributing a plurality of pull-up transistors driving a bit line equalizing signal line in a conjunction region. CONSTITUTION: A semiconductor memory device includes a sub word decoder region(120), a bit line equalizing and sensing amplification region(140), and a conjunction region(160). A main word decoder circuit selects a cell array(100). A bit line equalizing signal generation circuit generates a bit line equalizing signal for controlling a transistor for precharge and equalizing offered to the bit line equalizing and sensing amplification region(140). A plurality of pull-up drivers drives a signal line for transporting the bit line equalizing signal with an established voltage.
申请公布号 KR20020068772(A) 申请公布日期 2002.08.28
申请号 KR20010009034 申请日期 2001.02.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JONG HYEON;JUNG, JUNG GEUN;KANG, SANG SEOK
分类号 G11C11/4091;(IPC1-7):G11C11/409 主分类号 G11C11/4091
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