A method of growing an InGaN semiconductor layer

摘要

The invention provides a method of growing a layer of InGaN by molecular beam epitaxy. The InGaN layer is grown at a substrate temperature of at least 650{C to provide improved material quality. Ammonia gas is used as the source of nitrogen for the growth process. The invention also provides a method of growing an (In,Ga)N layer structure by supplying ammonia and gallium to the growth chamber at substantially constant rates. The supply rate of indium to the growth chamber is varied to select the desired composition for the layer being grown. Each (In,Ga)N layer is grown at a substrate temperature of at least 650{C. The substrate temperature is kept constant during the growth process to avoid the need to interrupt the growth process to vary the substrate temperature between the growth of one layer and the growth of another layer.