| 摘要 |
PROBLEM TO BE SOLVED: To provide a large size self-supporting GaN single crystal substrate free from arsenic, and a method for producing the same. SOLUTION: The large size self-supporting GaN single crystal substrate free from arsenic and having a diameter of >=50 mm is obtained by forming a mask 2 having windows 3 each having a shape of a stripe like, point like, or the like, on a substrate 1 of Si, Ge or GaP and having a (111) plane as the surface, growing a GaN-based compound semiconductor expressed by the formula: AlxGa1-xN (0<=x<=1) as a buffer layer 4 on the mask 2, further epitaxially growing a GaN layer 5 on the GaN-based compound semiconductor and removing the substrate 1 and the mask 2. |
