| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a compound semiconductor single crystal by which a ZnTe-based compound semiconductor single crystal having a large size and a high resistance can be grown. SOLUTION: In the method for producing the ZnTe-based compound semiconductor single crystal or an at least ternary ZnTe-based compound semiconductor single crystal containing ZnTe, at least one element selected from the group 3B elements in the Periodic Table, such as Al, Ga or In, or halogen elements, such as Cl, Br or I, is added as an impurity during the growth of the single crystal.
|
