| 摘要 |
PURPOSE: A method for fabricating an interconnection of a semiconductor device is provided to effectively replace chlorine deposited on the side surface of a metal layer pattern by performing a plasma cleaning process using NH4OH, and to guarantee an anti-corrosion margin regarding the metal layer pattern by forming a nitride layer on the side surface of the metal layer pattern through an ashing process using NH3. CONSTITUTION: The first barrier layer, a metal layer and the second barrier layer are sequentially formed on an insulation layer(21). The second barrier layer, the metal layer and the first barrier layer are selectively etched by using a photoresist layer pattern as a mask. Polymer generated in the etch process is eliminated by performing a plasma cleaning process including NH4OH. The remaining polymer and photoresist layer pattern is removed by an ashing process using NF3/O2.
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