| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can improve the uniformity of the intra-plane film thickness of plasma treatment, for example, plasma CVD processing, and also improve the product yield. SOLUTION: The plasma processing apparatus is provided, in a treatment vessel 22 which can be evacuated, with a lower electrode 44 functioning also as a plate on which a body W to be treated is placed and an upper electrode 26, and applies high-frequency voltage between both electrodes to perform plasma treatment on the body to be treated. In the peripheral part of the lower electrode, a focusing ring 66 is provided with a prescribed interval on the outside from the outer periphery end surface of the body to be treated, wherein the prescribed interval is set within a range of 10 to 27 mm. This configuration realizes the improvement of the intra-plane uniformity of the film thickness of plasma treatment, for example, plasma CVD processing, and improvement of the product yield. |
