发明名称 PLANAR HYBRID DIODE RECTIFIER BRIDGE
摘要 A hybrid semiconductor device comprises four identical semiconductor diode chips each having top and bottom surfaces. Each chip is mounted on a respective mounting pad all of which lie in a common plane and, for ease of assembly, the four chips are mounted in identical top to bottom orientation, e.g., bottom surface down and electrically connected to the mounting pads. In one embodiment, the mounting pads for the chips and terminals for the device are integral with leads of a single ("component") lead frame and various electrical connectors for the chips comprise bonding wires or stamped metal jumpers added to the workpiece after the chips are mounted on the lead frame. The metal jumpers can be provided on a separate "jumper" lead frame used in cooperation with the component lead frame, or the jumpers can comprise portions of leads of the single component lead frame. Printed circuit boards embodiments are also disclosed.
申请公布号 EP1234331(A1) 申请公布日期 2002.08.28
申请号 EP20000974035 申请日期 2000.10.26
申请人 GENERAL SEMICONDUCTOR, INC. 发明人 GUILLOT, MARIE
分类号 H01L23/495;H01L23/52;H01L25/07;H01L29/06 主分类号 H01L23/495
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