发明名称 METHOD FOR MANUFACTURING GROUP XIII NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To easily manufacture a group XIII nitride crystal such as gallium nitride having excellent crystallinity under a low dangerous condition particularly by a solution synthesis. SOLUTION: In this method for manufacturing the group XIII nitride crystal, the group XIII nitride crystal having excellent crystallinity is obtained by heating a metal and/or a compound containing a group XIII element and an alkali metal amide of not less the five fold mol thereof under an ammonia atmosphere to bring the molten alkali metal amide into contact with the metal and/or the compound containing the group XIII element.
申请公布号 JP2002241112(A) 申请公布日期 2002.08.28
申请号 JP20010195510 申请日期 2001.06.27
申请人 NICHIA CHEM IND LTD 发明人 TABATA HIDEO;KUBO TOMOYA;MAKINO KENYA
分类号 C01B21/06;C01B21/072;C30B11/06;C30B19/02;C30B29/38;(IPC1-7):C01B21/06 主分类号 C01B21/06
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