| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal growth device capable of stably producing a single crystal having excellent quality by, in the process of single crystal growth, allowing the central-symmetric natural convection of a melt and thereby inhibiting variation in temperature of the melt at the growth interface, and also to provide a single crystal growth method using the device. SOLUTION: The single crystal growth device 1 using a Czochralski method is provided with a plurality of cooling tubes 6a-6d for cooling a lower part of the peripheral side face of a crucible 4 and a means for controlling the flow rate and/or temperature of a coolant flowing through the inside of each of the cooling tubes 6a-6d.
|
