| 摘要 |
<p>The present invention relates to an improved insitu hardmask open strategy which is performed before carrying out a metal etch. The method for opening the hardmask (2) made of SiO2, Si3N4 or SiON comprises the steps of providing a substrate having thereon at least one metal layer (3), a hardmask layer made of SiO2, Si3N4 or SiON and a patterned photoresist layer overlying said hardmask layer (2), etching said hardmask layer (2) in a plasma etching process using an etchant source gas which comprises a fluorine containing gas and oxygen, wherein the plasma processing chamber used for etching the hardmask layer (2) is the same as the plasma processing chamber in which the at least one metal layer (3) is etched in another plasma etching process after the hardmask layer (2) has been etched. <IMAGE></p> |
