| 摘要 |
PROBLEM TO BE SOLVED: To actualize a pattern inspecting method which can analyzes roughness of the edge of a fine pattern wherein features of a material, a process, and an exposure optical system appear in a semiconductor manufacturing process and a pattern inspecting device which can take a spatial frequency analysis of a pattern shape by using an image obtained by a scanning type electron-beam microscope with a length measuring function. SOLUTION: A pattern edge is detected over a wide area by directly handling image data of an observed image from a control system 2 of the scanning electron-beam microscope 1 and an adjacent computer and a terminal 3 and a spatial frequency analysis of its position coordinates is taken. Consequently, effects of a drift on a screen, etc., can be removed and a sufficient number of pieces of data can speedily be obtained with high precision, so that features of the material, process, or optical system can be analyzed. |
