| 摘要 |
PURPOSE: A method for growing a nitride semiconductor layer using pendeoepitaxy is provided to form a nitride semiconductor layer of high quality by using a pendeoepitaxy growth method. CONSTITUTION: A GaN layer as the first nitride layer(110) is formed on a substrate(100). A dielectric layer mask such as SiO2 or Si3N4 is formed in a stripe pattern on the first nitride layer(110). A part of the substrate(100) is exposed by implanting reactive ions and performing a dry etch process. The dielectric layer mask is damaged by erosion. An island-shaped pattern is formed by removing the dielectric layer mask. A thermal process is performed to remove a defective part caused by the dry etch process. The GaN layer as the second nitride layer is formed thereon.
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