发明名称 |
Process of manufacturing a DRAM cell capacitor having increased trench capacitance |
摘要 |
A trench capacitor having an increased surface area. In one embodiment, the trench capacitor is a dual trench capacitor having a first trench and a second trench wherein inner walls of the trenches electrically connect. The invention also includes a single trench capacitor wherein the trench is curved around an axis substantially perpendicular to a substrate surface.
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申请公布号 |
US6440813(B2) |
申请公布日期 |
2002.08.27 |
申请号 |
US20010767634 |
申请日期 |
2001.01.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLLINS CHRISTOPHER N.;JONES HARRIS C.;NORUM JAMES P.;SCHMITZ STEFAN |
分类号 |
H01L21/334;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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