发明名称 |
Plasma etch method for forming patterned oxygen containing plasma etchable layer |
摘要 |
A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable layer. There is then formed upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer the blanket hard mask layer to form a patterned hard mask layer. There is then etched while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer the blanket oxygen containing plasma etchable layer to form a patterned oxygen containing plasma etchable layer. The second plasma etch method employs a second etchant gas composition comprising: (1) an oxygen containing etchant gas which upon plasma activation provides an active oxygen etching species; and (2) boron trichloride.
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申请公布号 |
US6440863(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US19980148556 |
申请日期 |
1998.09.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSAI CHIA-SHIUN;CHEN CHAO-CHENG;TAO HUN-JAN |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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