| 摘要 |
An integrated circuit includes a substrate, at least one dielectric layer adjacent the substrate, and an interconnect structure in the at least one dielectric layer and comprising a copper portion and a barrier layer between the copper portion and adjacent portions of the at least one dielectric layer. Moreover, the barrier layer preferably comprises at least one of rhodium, ruthenium and rhenium. These materials are virtually insoluble and immiscible in copper, and can be readily deposited by electroless deposition, for example. The barrier layer may be in contact with the adjacent portions of the at least one dielectric layer. In addition, at least one other barrier layer can be provided between the barrier layer and the copper portion. The interconnect structure in some embodiments may extend both laterally and vertically within the at least one dielectric layer.
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