发明名称 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
摘要 A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.
申请公布号 US6440754(B2) 申请公布日期 2002.08.27
申请号 US20010843230 申请日期 2001.04.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HAYASHI SHINICHIRO;OTSUKI TATSUO
分类号 G11C11/22;H01L21/02;H01L21/768;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/00 主分类号 G11C11/22
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