| 摘要 |
The object of the present invention is to provide a deposited film forming apparatus and deposited film forming method that can efficiently, cheaply, and stably supply high-quality amorphous silicon devices. This object is achieved by providing a vacuum vessel capable of providing a substrate therein, evacuating the inside of the vacuum vessel by an evacuation means, introducing a gas from gas supply means into the vacuum vessel, and applying high-frequency power from a high-frequency power source, thereby generating a plasma, wherein the evacuation means comprises at least two evacuation means as first evacuation means and second evacuation means, wherein the vacuum vessel is moved while maintaining a vacuum between the two evacuation means, and wherein the vacuum vessel is capable of being connected to each of the evacuation means, high-frequency power source, and gas supply means through a detachable connection mechanism.
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