| 摘要 |
The invention comprises methods of fabricating attenuated phase shift masks. In but one implementation, a method of fabricating an attenuated phase shift mask having a circuitry pattern area and a no-circuitry area includes providing a transparent substrate. A first light shielding layer is formed over the transparent substrate. The first light shielding layer comprises a semi-transparent shifter material. A second light shielding layer is formed over the first light shielding layer. At least some of the second light shielding layer material is removed from the circuitry pattern area prior to forming a circuitry pattern in a photoresist layer in the circuitry pattern area. In one implementation, the first light shielding layer is etched within the circuitry pattern area without using the. second light shielding layer as a mask within the circuitry pattern area during the etching. In one implementation, the first light shielding layer is etched within the circuitry pattern area to define a desired circuitry pattern while a photoresist layer masks some of the first light shielding layer within the circuitry pattern area.
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