BOND PAD OF SEMICONDUCTOR DEVICE RESISTANT TO THERMO-MECHANICAL STRESS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A bond pad of a semiconductor device resistant to thermo-mechanical stress is provided to absorb the thermo-mechanical stress applied to the bond pad in a wire bonding process like beam lead bonding, by additionally forming the first metal layer for the bond pad and a plate polysilicon layer between the first insulation layers. CONSTITUTION: A semiconductor substrate(100) is prepared. A lower structure is formed on the semiconductor substrate. The first insulation layer(102) is formed on the lower structure. The plate polysilicon layer(104) improves the physical characteristic of a wire bonding process, formed on the first insulation layer. The first metal layer(108) is formed on the plate polysilicon layer. The second metal layer is formed on the first metal layer.