发明名称 Method of fabricating interconnect of capacitor
摘要 A method of fabricating an interconnect of a capacitor. A substrate having a capacitor is provided. The capacitor comprises a bottom electrode electrically connected to the substrate, a dielectric layer and a top electrode thereon. A spin-on dielectric layer is formed on the substrate and the capacitor. The spin-on dielectric layer on the substrate is thicker than that on the top electrode. The spin-on dielectric layer is etched back until the top electrode is exposed. A patterned metal layer is formed on the spin-on dielectric layer and the top electrode with a bottom surface in directly contact with a top surface of the top electrode.
申请公布号 US6440845(B1) 申请公布日期 2002.08.27
申请号 US20000684591 申请日期 2000.10.05
申请人 UNITED MICROELECTRONICS CORP. 发明人 JOU CHEWNPU;YEN ROGER
分类号 H01L21/02;H01L21/768;H01L23/522;(IPC1-7):H01L21/476;H01L21/20;H01L21/31;H01L21/469 主分类号 H01L21/02
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