发明名称 |
Method of fabricating interconnect of capacitor |
摘要 |
A method of fabricating an interconnect of a capacitor. A substrate having a capacitor is provided. The capacitor comprises a bottom electrode electrically connected to the substrate, a dielectric layer and a top electrode thereon. A spin-on dielectric layer is formed on the substrate and the capacitor. The spin-on dielectric layer on the substrate is thicker than that on the top electrode. The spin-on dielectric layer is etched back until the top electrode is exposed. A patterned metal layer is formed on the spin-on dielectric layer and the top electrode with a bottom surface in directly contact with a top surface of the top electrode.
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申请公布号 |
US6440845(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20000684591 |
申请日期 |
2000.10.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
JOU CHEWNPU;YEN ROGER |
分类号 |
H01L21/02;H01L21/768;H01L23/522;(IPC1-7):H01L21/476;H01L21/20;H01L21/31;H01L21/469 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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