| 摘要 |
The present invention is a method of fabricating interconnects. A semiconductor substrate having a dielectric layer is provided. The dielectric layer has a via opening therein, which exposes the semiconductor substrate. Next, the surfaces of the via opening is covered with a conformal titanium layer formed by a sputtering process. The surface of the conformal titanium layer is covered with an Al-Si-Cu alloy layer formed by a sputtering process at a temperature of about 0° C. to 200° C. Then, the surface of the Al-Si-Cu alloy layer is covered with an Al-Cu alloy layer formed by a sputtering process at a temperature of about 380° C. to 450° C., which Al-Cu alloy layer fills the via opening. The Al-Cu alloy layer, the Al-Si-Cu alloy layer and the wetting layer on the dielectric layer are patterned by photolithography and etching process.
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