发明名称 |
Voltage regulator circuit for a semiconductor memory device |
摘要 |
A word line voltage generating circuit has a high voltage generator for generating a high voltage is response to an activation signal. In addition it has a regulator circuit that includes two successive regulators. The first regulator receives the high voltage and outputs an intermediate voltage in response to a reference voltage and the activation signal. The first regulator receives the reference voltage, and adjusts the high voltage to deliver a word line voltage. The second stage includes has a depletion-type NMOS transistor, which can clamp the high voltage to a voltage of a required level.
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申请公布号 |
US6442079(B2) |
申请公布日期 |
2002.08.27 |
申请号 |
US20010765692 |
申请日期 |
2001.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYEONG-HOON;LEE SEUNG-KEUN |
分类号 |
G11C16/06;G11C5/14;G11C16/30;H01L21/822;H01L27/04;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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