SEMICONDUCTOR DEVICE WITH CONTACT HAVING UNIFORM CONTACT RESISTANCE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a semiconductor device with a contact having uniform contact resistance is provided to form uniform contact resistance regarding the entire surface of a semiconductor substrate, by making the bottom surface of a contact hole connecting a lower interconnection layer with an upper interconnection layer positioned on or inside a capping layer located on the lower interconnection. CONSTITUTION: The semiconductor substrate(50) is prepared. An interconnection layer(54), a capping layer(56a) and an etch stop layer(58a) are sequentially formed in a part of the upper surface of the semiconductor substrate. An interlayer dielectric including the first contact hole exposing a partial surface of the etch stop layer is formed on the semiconductor substrate having the etch stop layer, composed of a material having high etch selectivity regarding the etch stop layer. The etch stop layer exposed by the first contact hole is completely eliminated to form the second contact hole exposing the upper surface of the capping layer. A conductive layer(66) filling the second contact hole is formed.