发明名称 VAPOR DEPOSITION UNIT
摘要 chemical vapor deposition; units for deposition of gaseous metal carbonyls on backing; mechanical engineering and metallurgy. SUBSTANCE: bedplate 12 and cover 14 of unit 10 form reaction chamber 20. Ring 28 of mandrel 36 is located in bedplate 12 ; it is isolated from bedplate supporting mandrel 36. Ring 28 has at least one liquid passage and is adapted to receive matrix. Unit 10 is provided with device 22 for introducing gaseous carbonyl into chamber. Liquid heat-transfer agent passes to mandrel 36 through ring 28, thus making it possible to keep mandrel 36 at preset temperature to ensure thermal decomposition. EFFECT: avoidance of contamination of silicone gaskets of large surface, leakage of liquid heat-transfer agent and leakage of metal carbonyl into lower chamber. 10 cl, 6 dwg
申请公布号 RU2188252(C2) 申请公布日期 2002.08.27
申请号 RU20000108491 申请日期 1998.05.11
申请人 INKO LIMITED 发明人 VEBER REJNKHART;EHLBERTI MAJKL RAJAN;TIROLER DZHORDZH POL;PASSMOR IAN KEJT
分类号 C23C16/01;C23C16/16;C23C16/44;C23C16/458;C23C16/46;(IPC1-7):C23C16/16 主分类号 C23C16/01
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