发明名称 |
Reduction of plasma charge-induced damage in microfabricated devices |
摘要 |
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.
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申请公布号 |
US6440756(B2) |
申请公布日期 |
2002.08.27 |
申请号 |
US20000735991 |
申请日期 |
2000.12.13 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
SHOHET J. LEON;CISMARU CRISTIAN;CERRINA FRANCESCO |
分类号 |
H01J37/32;H01L21/00;(IPC1-7):H01L21/00;H01L21/20;H01L21/26;H01L21/31 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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