Semiconductor structures, methods of implanting dopants into semiconductor structures and methods of forming CMOS constructions

摘要

The invention includes a method of implanting dopants into a semiconductor structure wherein a lateral periphery of a photoresist mask is shifted after implanting a first dopant and prior to implanting a second dopant. The invention also includes semiconductor structures having two doped regions of a semiconductive material separated by a region less heavily doped than the doped regions.