| 摘要 |
A plurality of conductive films are formed on a semiconductor substrate with an insulating film sandwiched between the adjacent conductive films, and at least two of the plurality of conductive films are patterned simultaneously in the same shape. Selected ones of the plurality of conductive films are connected through viaholes formed in the insulating film to the semiconductor substrate. High-resistance elements, capacity elements or thin-film transistors are formed by using the selected ones of the plurality of conductive films. Thus, mask superposing allowances are made unnecessary in fabricating a semiconductor device, and the number of processes for fabricating the semiconductor device is reduced.
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