发明名称 |
Photoresist removing composition |
摘要 |
A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.
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申请公布号 |
US6440326(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20000524499 |
申请日期 |
2000.03.13 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
MARUYAMA TAKETO;ABE HISAKI;KARITA TETSUYA;AOYAMA TETSUO |
分类号 |
C23G1/06;G03F7/42;H01L21/311;(IPC1-7):C09K13/00;C09K13/06 |
主分类号 |
C23G1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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