发明名称 System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)
摘要 The present invention relates to a system for mitigating wafer disformation. The system includes at least a first polishing pad and a second polishing pad for polishing a wafer surface. A CMP drive system selectively applys the first and second polishing pads against the wafer surface at first and second pressures, respectively. A measuring system measures a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad. A processor employs information from the measuring system to control the CMP drive system.
申请公布号 US6439963(B1) 申请公布日期 2002.08.27
申请号 US19990429428 申请日期 1999.10.28
申请人 ADVANCED MICRO DEVICES, INC. 发明人 RANGARAJAN BHARATH;SINGH BHANWAR;QUINTO URSULA Q.
分类号 B24B27/00;B24B37/04;B24B49/12;B24B49/16;(IPC1-7):B24B1/00 主分类号 B24B27/00
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