发明名称 |
System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP) |
摘要 |
The present invention relates to a system for mitigating wafer disformation. The system includes at least a first polishing pad and a second polishing pad for polishing a wafer surface. A CMP drive system selectively applys the first and second polishing pads against the wafer surface at first and second pressures, respectively. A measuring system measures a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad. A processor employs information from the measuring system to control the CMP drive system.
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申请公布号 |
US6439963(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US19990429428 |
申请日期 |
1999.10.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RANGARAJAN BHARATH;SINGH BHANWAR;QUINTO URSULA Q. |
分类号 |
B24B27/00;B24B37/04;B24B49/12;B24B49/16;(IPC1-7):B24B1/00 |
主分类号 |
B24B27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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