发明名称 |
Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity |
摘要 |
A method for simultaneously producing areas of paraelectric states and areas of ferroelectric states on a single thin film layer, thereby reducing the number of processing steps required to produce integrated chips containing both standard capacitors and non-volatile memory devices from the number of steps needed using the conventional approach. A device containing both ferroelectric capacitors and non-ferroelectric capacitors using a single thin film as the dielectric.
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申请公布号 |
US6441415(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US19990344580 |
申请日期 |
1999.06.25 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MOISE THEODORE S.;GILBERT STEPHEN R.;LAKEMAN CHARLES D. E.;SUMMERFELT SCOTT R.;YAMANAKA STACEY A. |
分类号 |
H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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