| 摘要 |
This invention provides a dielectric capacitor and its manufacturing method showing a good electric characteristic by preventing an external substance such as a reducing element from entering and diffusing into a dielectric film. In a ferroelectric capacitor C103, a first hydrogen diffusion prevention film 101 can prevent hydrogen generated during the film formation processes of oxide films 7 and 9 from entering and diffusing into a ferroelectric film 4. In addition, since the side wall part of the ferroelectric film 4 is covered with a second hydrogen diffusion prevention film 102, hydrogen is to be completely prevented from entering the internal part of the ferroelectric film 4 from the side wall part thereof. Consequently, the electric characteristic of the ferroelectric film 4 can be kept in good state. Further, since the second hydrogen diffusion prevention film 102 does not exist on the upper surface of the oxide film 7, the height of the ferroelectric capacitor C103 is to be minimized at a required level. This is advantageous for an entire part of a semiconductor device provided with the ferroelectric capacitor C103 to be made flat.
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