发明名称 |
Method of detecting film defects using chemical exposure of photoresist films |
摘要 |
Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.
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申请公布号 |
US6440621(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20000703081 |
申请日期 |
2000.10.31 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SUTTON DANIEL E.;LANSFORD CHRISTOPHER H. |
分类号 |
G01N21/91;G01N21/95;G03F7/00;H01L21/66;(IPC1-7):G03F9/00;G03C5/00;G06K9/00 |
主分类号 |
G01N21/91 |
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