发明名称 |
Non-volatile semiconductor device and non-volatile semiconductor memory device for storing multi-value information |
摘要 |
A non-volatile semiconductor device stores multi-value information of at least two bits in one memory cell. A source region and a drain region serve as diffusion regions. A first channel region and a second channel region are placed between the source region and the drain region. A first gate electrode is arranged over the first channel region and the drain region. A second gate electrode is arranged over the second channel region and the source region. The first channel region stores a first threshold value while the second channel region stores a second threshold value different from the first threshold value.
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申请公布号 |
US6441425(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20000685653 |
申请日期 |
2000.10.10 |
申请人 |
NEC CORPORATION |
发明人 |
SUZUKI KAZUTERU |
分类号 |
G11C16/00;G11C11/56;G11C16/04;G11C17/12;G11C17/18;H01L21/8246;H01L27/112;(IPC1-7):H01L29/76 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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