发明名称 Method of manufacturing thin film and thin film capacitor
摘要 In a method of manufacturing a thin film, a buffer layer is formed a substrate. Thereafter, a ferroelectric thin film material is applied thereto before thermally decomposing the buffer layer. Subsequently, the buffer layer and the ferroelectric thin film are decomposed together. Finally, a crystallized thermal process is performed.
申请公布号 US6440751(B1) 申请公布日期 2002.08.27
申请号 US20000653141 申请日期 2000.08.31
申请人 NEC CORPORATION 发明人 HASE TAKASHI
分类号 H01G4/33;C23C18/12;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):H01L21/00 主分类号 H01G4/33
代理机构 代理人
主权项
地址