Post metal etch cleaning method

摘要

A post metal etch cleaning method which begins by providing a wafer with an etched metal layer formed thereon, wherein the etched metal layer is covered with a polymer residue. A fluorine based organic acid solvent is used to clean the metal layer, followed by removing the solvent by a physical method. Next, a de-ionized water is applied to flush the metal layer before performing a drying step on the wafer to dry the metal layer.