| 摘要 |
microelectronics. SUBSTANCE: method provides for microtechnological working of substrate surface under condition set by results of preliminary determination of sorption interaction of physical-chemical factor with substrate surface. Silicon carbide is utilized in the capacity of substrate. Surface of base face {0001} of substrate is subjected to microtechnological working which is established by relation of values of edge wetting angles of Si- and C- surfaces of base face of silicon carbide wetted with distilled water, cleaned by means of HF and/or treated with melt KOH. Judgment on Si surface is made by bigger value and on C surface by lesser value of edge wetting angle. EFFECT: simplified method and versatility of its employment. 1 tbl |
