发明名称 |
Method of adding bias-independent aluminum bridged anti-fuses to a tungsten plug process |
摘要 |
A three-terminal integrated circuit device structure is provided that relies upon the formation of an anti-fuse through a silicon substrate with the melting and flowing of an aluminum/aluminum alloy to create the current path. The use of an oversized contact permits the Tungsten plug to be eliminated from the anti-fuse structure, but allows the aluminum melt and flow mechanism to be used with a Tungsten plug process.
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申请公布号 |
US6440781(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20010875566 |
申请日期 |
2001.06.06 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
COPPOCK WILLIAM M.;DARK CHARLES |
分类号 |
H01L21/768;H01L23/525;(IPC1-7):H01L21/82;H01L29/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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