N-profile engineering at the poly/gate oxide and gate oxide/SI interfaces through NH3 annealing of a layered poly/amorphous-silicon structure

摘要

A method and structure providing N-profile engineering at the poly/gate oxide and gate oxide/Si interfaces of a layered polysilicon/amorphous silicon structure of a semiconductor device. NH3 annealing provides for the introduction of nitrogen to the interface, where the nitrogen suppresses Boron diffusion, improves gate oxide integrity, and reduces the sites available for trapping hot carriers which degrade device performance.