发明名称 FILM FORMATION METHOD AND FILM FORMATION APPARATUS
摘要 PURPOSE: A film formation method and a film formation apparatus are provided to achieve improved carrier mobility by moderating the energy barrier existing in an organic compound layer. CONSTITUTION: A film formation method comprises a first step of forming a first function region(306) comprising a first organic compound on an electrode during irradiating a light in a film formation chamber(301), a second step of forming a mixed region including the first organic compound and a second organic compound(303b) on the first function region during irradiating the light in the film formation chamber, and a third step of forming a second function region(307) including the second organic compound on the mixed region during irradiating the light in the film formation chamber.
申请公布号 KR20020068469(A) 申请公布日期 2002.08.27
申请号 KR20020009200 申请日期 2002.02.21
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 SEO SATOSHI;SHIBATA NORIKO;YAMAZAKI SHUNPEI
分类号 H05B33/10;C23C14/02;C23C14/12;C23C14/24;C23C14/56;H01L51/00;H01L51/30;H01L51/40;H01L51/50;(IPC1-7):H05B33/10 主分类号 H05B33/10
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