发明名称 Circuit configuration having at least one nanoelectronic component and method for fabricating the component
摘要 At least one CMOS component which is configured in a semiconductor substrate is part of the inventive circuit assembly. An insulating layer is configured on the semiconductor substrate. The insulating layer covers the CMOS component. A nanoelectronic component is configured above the insulating layer. At least one conducting structure is configured in the insulating layer and serves to link the nanoelectronic component with the CMOS component. If several nanoelectronic components are provided, they are preferably grouped to nano-circuit blocks. Each of the nano-circuit blocks is so small that the RC times of their lines do not exceed 1 ns.
申请公布号 US6442042(B2) 申请公布日期 2002.08.27
申请号 US20010883901 申请日期 2001.06.18
申请人 INFINEON TECHNOLOGIES AG 发明人 RAMCKE TIES;RISCH LOTHAR;ROESNER WOLFGANG
分类号 H01L21/768;H01L21/8238;H01L23/528;H01L27/00;H01L27/06;H01L27/092;H01L27/10;H01L29/06;(IPC1-7):H05K7/02 主分类号 H01L21/768
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