Method of copper-polysilicon gate formation

摘要

In one embodiment, a method for manufacturing a field effect transistor (100) includes forming a polysilicon gate (104) on a surface (106) of a semiconductor substrate (102) in association with adjacent source/drain regions (110, 112) and forming dielectric spacers (124, 126) on sides of the polysilicon gate. The method further includes forming a trench (202) between the dielectric spacers on a surface (200) of the polysilicon gate and filling at least a portion of the trench with barrier and copper or other high conductivity metal to form a copper-polysilicon gate of the field effect transistor.