| 发明名称 |
VERFAHREN ZUM ÄTZBEHANDELN VON HALBLEITERSUBSTRATEN ZWECKS FREILEGEN EINER METALLSCHICHT |
| 摘要 |
Process for partially exposing a metal layer on a surface of a semiconductor substrate comprises removing at least a first part of one layer applied to the metal layer by dry etching and a second part by wet etching. Dry etching removes more than 80, preferably more than 90% of the layer. Plasma etching is used in the dry etching step. Immersion, spray or rotation etching is used for the wet etching step. |
| 申请公布号 |
AT409429(B) |
申请公布日期 |
2002.08.26 |
| 申请号 |
AT19990001233 |
申请日期 |
1999.07.15 |
| 申请人 |
SEZ SEMICONDUCTOR-EQUIPMENT ZUBEHOER FUER DIE HALBLEITERFERTIGUNG AG |
发明人 |
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| 分类号 |
H01L21/302;H01L21/306;H01L21/311;H01L21/3205;H01L21/3213;H01L21/60;H01L23/48;H01L23/485;H01L23/52 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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