METHOD AND DEVICE FOR MEASURING SURFACE STATE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for measuring a surface state that can improve determination accuracy while eliminating the influence of an interference fringe by intercepting infrared rays unnecessary for measurement, and carrying out the incidence of the infrared rays to a substrate at an optimum angle in measuring the surface state by an infrared multiple internal reflection method. SOLUTION: This device has an incident optical system 18 for carrying out the incident of the infrared rays to a semiconductor wafer 16; a shading plate 20 covering a prescribed part of the end part of the semiconductor wafer 16 to intercept the incidence of the infrared rays to the semiconductor wafer 16 from the prescribed part; an infrared ray detector 24 for detecting the infrared rays emitted from the semiconductor wafer 16 after multiple reflection inside the semiconductor wafer 16; and a measuring control computer 28 for measuring the surface state of the semiconductor wafer 16 on the basis of the infrared rays detected by the infrared ray detector 24.