| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method, with which the generation of various adverse effects on the element characteristics or the like of the semiconductor device by the formation of a large recess in a trench element isolation region, for instance, the generation of the inverted narrow channel effect of forming a parasitic transistor and reducing the threshold voltage of a MOS transistor, is prevented. SOLUTION: By interposing a sidewall 17a, composed of polysilicon between a trench protecting film 16 and a trench-embedding insulation film 18 inside a trench, the end part of the trench protecting film 16 clamped on both sides by a silicon substrate 11, and the sidewall 17a is prevented from being excessively etched at the time of wet-etching a pad which is thermally oxidized film used for forming the trench. Thus, even though the end part of the trench protecting oxidized film 16 at the upper end part of the trench is etched and a recess 19 is formed, and the recess 19 becomes for smaller than those in the conventional cases.
|
