| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor laser device which prevents FFP(far field pattern) in the horizontal direction from ripples to lie on, in the case of high output operation. SOLUTION: In a nitride semiconductor laser device of an effective refractive index type provided with a ridge, the first insulation film, having a value smaller than the refractive index of a waveguide region is formed in the neighborhood of and on the side surface of the ridge on an exposed surface exposed by etching and the second insulation film, having a value larger than the refractive index of the waveguide region is formed on the exposed surface away from the ridge and on a side surface different from the surface of an oscillator in the waveguide region. The second insulating film consisting of metal or a semiconductor may have a value larger than the refractive index of the waveguide region.
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